Three-Axis Tunneling Micro accelerometer Based on Self-Organising Structures

I.E. Lysenko; M.A. Denisenko; A.S. Isaeva; V.D. Popov

doi:https://doi.org/10.14445/22315381/IJETT-V68I11P212

Research Article | Open Access | Download PDF

Volume 68 | Issue 11 | Year 2020 | Article Id. IJETT-V68I11P212 | DOI : https://doi.org/10.14445/22315381/IJETT-V68I11P212

Three-Axis Tunneling Micro accelerometer Based on Self-Organising Structures

I.E. Lysenko, M.A. Denisenko, A.S. Isaeva, V.D. Popov

Citation :

I.E. Lysenko, M.A. Denisenko, A.S. Isaeva, V.D. Popov, "Three-Axis Tunneling Micro accelerometer Based on Self-Organising Structures," International Journal of Engineering Trends and Technology (IJETT), vol. 68, no. 11, pp. 92-96, 2020. Crossref, https://doi.org/10.14445/22315381/IJETT-V68I11P212

Abstract

The paper presents the design and manufacturing technology of a three-axis integral micromechanical tunnel-type accelerometer. The technological features of the controlled self-organization of mechanically stressed semiconductor GaAs / InAs layers for fabricating MEMS sensor structures are considered. The principle of operation of the tunnel accelerometer is presented. The proposed design was modeled and optimized using ANSYS CAD. The obtained simulation results can be used to develop high-tech precision three-axis MEMS linear acceleration sensors.

Keywords

microelectromechanical system, linear acceleration sensor, accelerometer, tunnel effect, MEMS.

References

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