International Journal of Engineering
Trends and Technology

Research Article | Open Access | Download PDF

Volume 24 | Number 1 | Year 2015 | Article Id. IJETT-V24P230 | DOI : https://doi.org/10.14445/22315381/IJETT-V24P230

Effects of the Average Temperature on the Photocurrent Density of Inorganic Solar Cells Based on Silicon in the Presence of Excitons


Modou Faye, Saliou Ndiaye, Cheikh Mbow, Bassirou Ba

Citation :

Modou Faye, Saliou Ndiaye, Cheikh Mbow, Bassirou Ba, "Effects of the Average Temperature on the Photocurrent Density of Inorganic Solar Cells Based on Silicon in the Presence of Excitons," International Journal of Engineering Trends and Technology (IJETT), vol. 24, no. 1, pp. 160-164, 2015. Crossref, https://doi.org/10.14445/22315381/IJETT-V24P230

Abstract

Exciton dissociation in solar cells, based on inorganic materials, is easily done under the effect of the electric field. They exhibit strong photovoltaic properties, in particular the generation of quantum efficiency of the charge carriers. The electron continuity equations and exciton coupled, governing generation-recombination mechanisms and dissemination after a monochromatic illumination from the front side and a thermal insulation from the back side of the cell and the heat equation were resolved by a numerical approach based on the finite volume method. These mechanisms are analyzed through the profile of the total photocurrent density, calculated for different values of the average temperature. The effects of the heating factor, the number of Fourier and the surface conversion velocity on the total photocurrent density were analyzed. In the end, a comparison between the total photocurrent densities, calculated as functions of these two forms coupling coefficients volume fixed and different in the base, was also proposed. This study allowed us to achieve our objective, namely the development of a numerical model applicable to inorganic solar cells.

Keywords

Excitons, Average temperature, Factor heater, Number of Fourier, photocurrent.

References

[1] D. E. Kane, R. M. Swanson: The effects of excitons on apparent band gap narrowing and transport in semiconductors, J. Appl. Phys. 73, 1193-1197 (1993).
[2] M. Burgelman, B. Minnaert ; Including excitons in semiconductor solar cell modeling. Thin Solid Films 511-512, 214-218 (2006).
[3] S. Zh. Karazhanov ; Temperature and doping level dependence solar cell performance Including excitons. Solar Energy Materials & Solar Cells 63 (2000) 149-163.
[4] R. Corkish, D. S. P. Chan, and M. A. Green ; Excitons in silicon diodes and solar cells: A three-particle theory. Institute of Physics. [(S0021-8979(1996) 0070-9].
[5] M. Faye, M. MBow, M. Ba: Numerical Modeling of the Effects of Excitons in a Solar Cell Junction n+p of the Model by Extending the Space Charge Layer, International Review of Physics (I.RE.PHY), Vol. 8, N. 4 ISSN 1971-680X (August 2014)
[6] Y.Zhang, A.Mascarenhas, S. Deb: Effets of excitons in solar cells J. Appl. Phys. 84 3966-3971 3966 (1998).
[7] Chunjun Lianga,*, Yongsheng Wanga, Dan Lib, Xingchen Jib, Fujun Zhanga, Zhiqun Hea ; Modelind and simulation of bulk heterojunction polymer solar cells. Solar Energy Materials & Solar Cells 127 (2014) 67-86.
[8] V. A. Trukhanov, V.V. Bruevich, D.Yu. Paraschuk ; Effect of doping on performance of organic solar cells. International Laser Center and Faculty of Physics, M.V. Lomonosov Moscow State University, Moscow 119991, Russia (Dated: December 1, 2011)
[9] Ji-Ting Shieh,1 Chiou-Hua Liu,2 Hsin-Fei Meng,3,a Shin- Rong Tseng,3 Yu-Chiang Chao,3 and Sheng-Fu Horng2 ; The effect of carrier mobility in organic solar cells. JOURNAL OF APPLIED PHYSICS 107, 084503 2010.
[10] S.V.Patankar: “Numerical Heat Transfer and Fluid Flow”, Hemisphere Publishing Corporation, McGraw-Hill Book Company, 1981.
[11] R. B. BIRD, W. E. STEWART, E N. LIGHTFOOT: Transport Phenomena, John Wiley and Sons, Inc, New York 2001.
[12] D. W. PEACEMAN, H. A. RACHFORD, The Numerical Solution of Parabolic and Elliptic Difference Equations, J. Soc. Ind., Appli. Math, 3, 28-43, 1955.

Time: 0.0014 sec Memory: 36 KB
Current: 1.89 MB
Peak: 4 MB